N-Channel PowerTrench® MOSFET 200V, 62A, 27mΩ

Overview

This N-Channel MOSFET is produced using a PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.

  • Consumer Appliances
  • Synchronous Rectification
  • Battery Protection Circuit
  • Motor Drives
  • Uninterruptible Power Supplies

  • RDS(on) = 22.9mΩ ( Typ.) @ VGS = 10V, ID = 31A
  • Fast switching speed
  • Low Gate Charge
  • High performance trench technology for extremely low RDS(on)
  • High power and current handling capability
  • RoHS compliant

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDP2614

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Active

CAD Model

Pb

A

H

P

TO-220-3

NA

0

TUBE

800

Y

N-Channel

PowerTrench® T1

TO-220

Low-Medium Voltage

Standard

0

Single

0

200

27

±30

5

62

260

-

-

-

76

5435

18

810

505

110

$2.3207

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