FDN86246: N-Channel PowerTrench® MOSFET 150V 1.6A, 261mΩ

Datasheet: FDN86246-D.pdf
Rev. A (274kB)
Product Overview
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Product Change Notification
This N-Channel MOSFET is produced using an advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness.
Features
 
  • Max rDS(on) = 261 mΩ at VGS = 10 V, ID = 1.6 A
  • Max rDS(on) = 359 mΩ at VGS = 6 V, ID = 1.4 A
  • High Performance Trench Technology for Extremely Low rDS(on)
  • High Power and Current Handling Capability in a Widely Used Surface Mount Package
  • Fast Switching Speed
  • 100% UIL Tested
  • RoHS Compliant
Applications
  • This product is general usage and suitable for many different applications.
  • PD Switch
Availability & Samples
Specifications
Interactive Block Diagram
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
FDN86246 Active
Pb-free
Halide free
FDN86246 SOT-23-3 527AG 1 260 Tape and Reel 3000 $0.4457
Market Leadtime (weeks) : Contact Factory

Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
V(BR)DSS Min (V)
VGS Max (V)
VGS(th) Max (V)
ID Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
RDS(on) Max @ VGS = 10 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Package Type
FDN86246  
 $0.4457 
Pb
H
 Active   
N-Channel
Single
150
±20
4
1.6
1.5
-
-
261
-
1.6
168
SOT-23-3
Case Outlines
527AG   
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