N-Channel PowerTrench® MOSFET 150V 1.6A, 261mΩ

Favorite

Overview

This N-Channel MOSFET is produced using an advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness.

  • This product is general usage and suitable for many different applications.
  • PD Switch
  • Max rDS(on) = 261 mΩ at VGS = 10 V, ID = 1.6 A
  • Max rDS(on) = 359 mΩ at VGS = 6 V, ID = 1.4 A
  • High Performance Trench Technology for Extremely Low rDS(on)
  • High Power and Current Handling Capability in a Widely Used Surface Mount Package
  • Fast Switching Speed
  • 100% UIL Tested
  • RoHS Compliant

Search

Close Search

Products:

1

Expand Table

Collapse Table

Share

Export

Compare

Columns

0

Product Groups:

Orderable Parts:

1

Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Configuration

V(BR)DSS Min (V)

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

RDS(on) Max @ VGS = 10 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Pricing ($/Unit)

Loading...

FDN86246

Active

Pb

A

H

P

SOT-23-3

1

260

REEL

3000

Y

N-Channel

Single

150

±20

4

1.6

1.5

-

-

261

-

1.6

168

$0.4457

More Details

Show More

1-25 of 25

Products per page

Jump to :