MOSFETs | FDN360P

PowerTrench MOSFET, Single P-Channel

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Overview

This P-Channel Logic Level MOSFET is produced using an advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

  • This product is general usage and suitable for many different applications.
  • Battery Powered Circuits
  • -2 A, -30 V
  • RDS(on) = 80 mΩ @ VGS = -10 V
  • RDS(on) = 125 mΩ @ VGS = -4.5 V
  • Low Gate Charge (6.2nC typical)
  • High Performance Trench Technology for Extremely Low rDS(on)
  • High Power Version of Industry Standard SOT-23 Package. Identical Pin-Out to SOT-23 with 30% Higher Power Handling Capability

Material Composition

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Configuration

V(BR)DSS Min (V)

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

RDS(on) Max @ VGS = 10 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Pricing ($/Unit)

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FDN360P

Active

Pb

A

H

P

SOT-23-3

527AG

1

260

REEL

3000

N

P-Channel

Single

-30

20

-3

-2

0.5

-

125

80

3

6.2

298

$0.1161

More Details

FDN360P-NBGT003B

Obsolete

Pb

A

H

P

SOT-23-3

527AG

1

260

REEL

3000

N

P-Channel

Single

-30

20

-3

-2

0.5

-

125

80

3

6.2

298

Price N/A

More Details

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