N-Channel Logic-Level Enhancement Mode Field Effect Transistor 30V, 2.2A, 65mΩ

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Overview

SuperSOT™-3 N-Channel logic level enhancement mode power field effect transistors are produced using a proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.

  • This product is general usage and suitable for many different applications.
  • 2.2 A, 30 V
     RDS(ON) = 0.065 Ω @ VGS = 4.5 V
     RDS(ON) = 0.082 Ω @ VGS = 2.5 V.
  • Industry standard outline SOT-23 surface mount package using proprietary SuperSOT™-3 design for superior thermal and electrical capabilities.
  • High density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.

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CAD Models

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Configuration

V(BR)DSS Min (V)

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

RDS(on) Max @ VGS = 10 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Pricing ($/Unit)

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FDN337N

Active

Pb

A

H

P

SOT-23-3

1

260

REEL

3000

N

N-Channel

Single

30

8

1

2.2

0.5

-

92

65

7

7

300

$0.1357

More Details

FDN337N-F169

Obsolete

Pb

A

H

P

SOT-23-3

1

260

REEL

3000

N

N-Channel

Single

30

±8

8

2.2

0.5

82

65

-

-

-

300

Price N/A

More Details

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