FDMT800120DC: N-Channel Dual CoolTM 88 PowerTrench® MOSFET 120V, 128A, 4.2mΩ

Datasheet: FDMT800120DC-D.pdf
Rev. A (403kB)
Product Overview
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Product Change Notification
This N-Channel MOSFET is produced using an advanced PowerTrench® process. Advancements in both silicon and Dual CoolTM package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance.
Features
 
  • Max rDS(on) = 4.14 mΩ at VGS = 10 V, ID = 20 A
  • Max rDS(on) = 6.0 mΩ at VGS = 6 V, ID = 16 A
  • Advanced Package and Silicon combination for low rDS(on) and high efficiency
  • Next generation enhanced body diode technology, engineered for soft recovery
  • Low profile 8x8mm MLP packag
  • MSL1 robust package design
  • 100% UIL tested
  • RoHS Compliant
Applications
  • Oring FET / Load Switch
  • Synchronous Rectification
  • DC-DC Conversion
Availability & Samples
Specifications
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
FDMT800120DC Active
Pb-free
Halide free
FDMT800120DC PQFN-8 483AQ 1 260 Tape and Reel 3000 $3.074
Market Leadtime (weeks) : 8 to 12

Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
V(BR)DSS Min (V)
VGS Max (V)
VGS(th) Max (V)
ID Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
RDS(on) Max @ VGS = 10 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Package Type
FDMT800120DC  
 $3.074 
Pb
H
 Active   
N-Channel
Single
120
±20
4
128
156
-
-
4.2
-
48
5605
PQFN-8
Case Outlines
483AQ   
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