FDMS86252L

N-Channel Shielded Gate PowerTrench^® MOSFET 150V, 12A, 56mΩ

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Overview

This N-Channel MOSFET is produced using an advanced PowerTrench^® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance.

Applications

This product is general usage and suitable for many different applications

Features

Shielded Gate MOSFET Technology
Max r_DS(on) = 56 mΩ at V_GS = 10 V, I_D = 4.4 A
Max r_DS(on) = 71 mΩ at V_GS= 6 V, I_D = 3.8 A
Max r_DS(on) = 75 mΩ at V_GS= 4.5 V, I_D= 3.7 A
Advanced package and silicon combination for low r_DS(on) and high efficiency
Next generation enhanced body diode technology, engineered for soft recovery
MSL1 robust package design
100% UIL tested
RoHS Compliant

Material Composition

Product Change Notification

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Container Qty.

Channel Polarity

Configuration

V_(BR)DSS Min (V)

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Pricing ($/Unit)

FDMS86252L

Active

PQFN-8

483AE

260

REEL

3000

N-Channel

Single

150

±20

7.6

952

$0.7837

Product Number:

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MOSFETs | FDMS86252L

N-Channel Shielded Gate PowerTrench® MOSFET 150V, 12A, 56mΩ

Overview

Availability & Samples (size)

Email Sales

N-Channel Shielded Gate PowerTrench^® MOSFET 150V, 12A, 56mΩ