MOSFETs | FDMS86252L

N-Channel Shielded Gate PowerTrench® MOSFET 150V, 12A, 56mΩ

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Overview

This N-Channel MOSFET is produced using an advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance.

  • This product is general usage and suitable for many different applications
  • Shielded Gate MOSFET Technology
  • Max rDS(on) = 56 mΩ at VGS = 10 V, ID = 4.4 A
  • Max rDS(on) = 71 mΩ at VGS = 6 V, ID = 3.8 A
  • Max rDS(on) = 75 mΩ at VGS = 4.5 V, ID = 3.7 A
  • Advanced package and silicon combination for low rDS(on) and high efficiency
  • Next generation enhanced body diode technology, engineered for soft recovery
  • MSL1 robust package design
  • 100% UIL tested
  • RoHS Compliant

Material Composition

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CAD Models

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Configuration

V(BR)DSS Min (V)

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

RDS(on) Max @ VGS = 10 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Pricing ($/Unit)

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FDMS86252L

Active

Pb

A

H

P

PQFN-8

483AE

1

260

REEL

3000

Y

N-Channel

Single

150

±20

3

12

50

-

75

56

-

7.6

952

$0.7837

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