N-Channel Shielded Gate PowerTrench® MOSFET 100V, 124A, 4.2mΩ

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Overview

This N-Channel MV MOSFET is produced using an advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimise on-state resistance and yet maintain superior switching performance with best in class soft body diode.

  • This product is general usage and suitable for many different applications.
  • Shielded Gate MOSFET Technology
  • Max rDS(on) = 4.2 mΩ at VGS = 10 V, ID = 44 A
  • Max rDS(on) = 12 mΩ at VGS = 6 V, ID = 22 A
  • ADD
  • 50% lower Qrr than other MOSFET suppliers
  • Lowers switching noise/EMI
  • MSL1 robust package design
  • 100% UIL tested
  • RoHS Compliant

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MSL Temp (°C)

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Channel Polarity

Configuration

V(BR)DSS Min (V)

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

RDS(on) Max @ VGS = 10 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Pricing ($/Unit)

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FDMS86181

Active

Pb

A

H

P

PQFN-8

1

260

REEL

3000

Y

N-Channel

Single

100

±20

4

124

125

-

-

4.2

-

27

2945

$1.0234

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