FDMS4435BZ

P-Channel PowerTrench^® MOSFET -30V, -18A, 20mΩ

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CAD Model

Overview

This P-Channel MOSFET is produced using an advanced Power Trench^® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.

Applications

Notebook PC

Features

Max r_DS(on) = 20 mΩ at V_GS = -10 V, I_D = -9.0 A
Max r_DS(on) = 37 mΩ at V_GS = -4.5 V, I_D = -6.5 A
Extended V_GSS range (-25 V) for battery applications
High performance trench technology for extremely low r_DS(on)
High power and current handling capability
HBM ESD protection level >7 kV typical (Note 4)
100% UIL tested
Termination is Lead-free and RoHS Compliant

Material Composition

Product Change Notification

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

Channel Polarity

Configuration

V_(BR)DSS Min (V)

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Pricing ($/Unit)

FDMS4435BZ

Active

PQFN-8

483AE

260

REEL

3000

P-Channel

Single

-25

-3

-18

1540

$0.4492

Product Number:

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MOSFETs | FDMS4435BZ

P-Channel PowerTrench® MOSFET -30V, -18A, 20mΩ

Overview

Availability & Samples (size)

Email Sales

P-Channel PowerTrench^® MOSFET -30V, -18A, 20mΩ