FDMS3672

N-Channel UltraFET Trench MOSFET 100V, 22A, 23mΩ

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Overview

UItraFET devices combine characteristics that enable benchmark efficiency in power conversion applications. Optimized for r_DS(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC-to-DC converters.

Applications

This product is general usage and suitable for many different applications.

Features

Maximum R_DS(on) = 23 mΩ at V_GS = 10V, I_D = 7.4A
Maximum R_DS(on) = 29 mΩ at V_GS= 6V, I_D = 6.6A
Typical Q_g = 31 nC at V_GS = 10 V
Low Miller Charge
Optimized efficiency at high frequencies
RoHS Compliant

Material Composition

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MSL Temp (°C)

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Container Qty.

Channel Polarity

Configuration

V_(BR)DSS Min (V)

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Pricing ($/Unit)

FDMS3672

Active

DFN-8

506DP

260

REEL

3000

N-Channel

Single

100

±20

2015

$1.1388

Product Number:

Distributor		Stock	BUY

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MOSFETs | FDMS3672

N-Channel UltraFET Trench MOSFET 100V, 22A, 23mΩ

Overview

Availability & Samples (size)

Email Sales