N-Channel UltraFET Trench MOSFET 100V, 22A, 23mΩ

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Overview

UItraFET devices combine characteristics that enable benchmark efficiency in power conversion applications. Optimized for rDS(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC-to-DC converters.

  • This product is general usage and suitable for many different applications.
  • Maximum RDS(on) = 23 mΩ at VGS = 10V, ID = 7.4A
  • Maximum RDS(on) = 29 mΩ at VGS= 6V, ID = 6.6A
  • Typical Qg = 31 nC at VGS = 10 V
  • Low Miller Charge
  • Optimized efficiency at high frequencies
  • RoHS Compliant

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Product

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CAD Models

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

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ON Target

Channel Polarity

Configuration

V(BR)DSS Min (V)

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

RDS(on) Max @ VGS = 10 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Pricing ($/Unit)

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FDMS3672

Active

Pb

A

H

P

DFN-8

1

260

REEL

3000

Y

N-Channel

Single

100

±20

4

22

78

-

-

23

18

31

2015

$1.1388

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