FDMS2672

N-Channel UltraFET Trench^® MOSFET 200V, 20A, 77mΩ

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Overview

UItraFET devices combine characteristics that enable benchmark efficiency in power conversion applications. Optimized for r_DS(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC to DC converters.

Applications

This product is general usage and suitable for many different applications.

Features

Max r_DS(on) = 77mΩ at V_GS = 10V, I_D = 3.7A
Max r_DS(on) = 88mΩ at V_GS = 6V, I_D = 3.5A
Low Miller Charge
RoHS Compliant

Material Composition

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Channel Polarity

Configuration

V_(BR)DSS Min (V)

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Pricing ($/Unit)

FDMS2672

Active

DFN-8

506DP

260

REEL

3000

N-Channel

Single

200

±20

1740

$1.0651

Product Number:

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MOSFETs | FDMS2672

N-Channel UltraFET Trench® MOSFET 200V, 20A, 77mΩ

Overview

Availability & Samples (size)

Email Sales

N-Channel UltraFET Trench^® MOSFET 200V, 20A, 77mΩ