Low/Medium Voltage MOSFETs | FDMS2672

N-Channel UltraFET Trench® MOSFET 200V, 20A, 77mΩ

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Overview

UItraFET devices combine characteristics that enable benchmark efficiency in power conversion applications. Optimized for rDS(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC to DC converters.

  • This product is general usage and suitable for many different applications.
  • Max rDS(on) = 77mΩ at VGS = 10V, ID = 3.7A
  • Max rDS(on) = 88mΩ at VGS = 6V, ID = 3.5A
  • Low Miller Charge
  • RoHS Compliant

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MSL Temp (°C)

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ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

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Crss Typ (pF)

Reference Price

FDMS2672

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Active

CAD Model

Pb

A

H

P

DFN-8

506DP

1

260

REEL

3000

Yes

N-Channel

PowerTrench® T1

Power 56 (SO-8FL)

Low-Medium Voltage

Standard

0

Single

0

200

77

±20

4

20

78

-

-

28

30

1740

8

238

95

30

$1.0651

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Reliability Data

Die Related Summary Data

Device: FDMS2672

Equivalent to wafer fab process: 2C

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

2C

0

3942797527

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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