Dual N-Channel Power Trench® MOSFET 20V, 3.8A, 66mΩ

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Overview

This device is designed specifically as a single package solution for dual switching requirement in cellular handset and other ultra-portable applications. It features two independent N-Channel MOSFETs with low on-state resistance for minimum conduction losses. The MicroFET 1.6x1.6 Thin package offers exceptional thermal performance for it's physical size and is well suited to switching and linear mode applications.

  • This product is general usage and suitable for many different applications.
  • Max rDS(on) = 66 mΩ at VGS = 4.5 V, ID = 3.4 A
  • Max rDS(on) = 86 mΩ at VGS = 2.5 V, ID = 2.9 A
  • Max rDS(on) = 113 mΩ at VGS = 1.8 V, ID = 2.5 A
  • Max rDS(on) = 160 mΩ at VGS = 1.5 V, ID = 2.1 A
  • Low profile: 0.55 mm maximum in the new package MicroFET 1.6x1.6 Thin
  • Free from halogenated compounds and antimony oxides
  • HBM ESD protection level > 1600V (Note 3)
  • RoHS Compliant

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Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDME1024NZT

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Active

CAD Model

Pb

A

H

P

UDFN-6

1

260

REEL

5000

Y

20

-

N-Channel

Dual

8

1

3.8

1.4

Q1=Q2=86

Q1=Q2=66

20

3

225

$0.3029

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