Dual N-Channel Power Trench® MOSFET 40V, 98A, 2.6mΩ

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Overview

This device includes two 40V N-Channel MOSFETs in a dual Power (3.3 mm X 5 mm) package. HS source and LS Drain are internally connected for half/full bridge, low source inductance package, low rDS(on) / Qg FOM silicon.

  • This product is general usage and suitable for many different applications.
  • Max rDS(on) = 2.6 mΩ at VGS = 10 V, ID = 23 A
  • Max rDS(on) = 3.95 mΩ at VGS = 4.5 V, ID = 19 A
  • Ideal for Flexible Layout in Primary Side of Bridge Topology
  • 100% UIL Tested
  • Kelvin High Side MOSFET Drive Pin-out Capability
  • Termination is Lead-free and RoHS Compliant

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDMD8240L

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Lifetime

CAD Model

Pb

A

H

P

PQFN-12

1

260

REEL

3000

N

40

Q1=Q2=2.6

N-Channel

Dual

±20

3

98

42

-

Q1=Q2=3.95

-

21

3020

$1.0133

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