MOSFETs | FDMC8651

N-Channel Power Trench® MOSFET 30V, 20A, 6.1mΩ

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Overview

This device has been designed specifically to improve the efficiency of DC/DC converters. Using new techniques in MOSFET construction, the various components of gate charge and capacitance have been optimized to reduce switching losses. Low gate resistance and very low Miller charge enable excellent performance with both adaptive and fixed dead time gate drive circuits. Very low rDS(on) has been maintained to provide a sub logic-level device.

  • This product is general usage and suitable for many different applications.
  • Max rDS(on) = 6.1 mΩ at VGS = 4.5 V, ID = 15 A
  • Max rDS(on) = 9.3 mΩ at VGS = 2.5 V, ID = 12 A
  • Low Profile - 1 mm max in Power 33
  • 100% UIL Tested
  • RoHS Compliant

Material Composition

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Configuration

V(BR)DSS Min (V)

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

RDS(on) Max @ VGS = 10 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Pricing ($/Unit)

FDMC8651

Active

CAD Model

Pb

A

H

P

PQFN-8

483AK

1

260

REEL

3000

Y

N-Channel

Single

30

12

1.5

20

41

9.3

6.1

-

-

19.4

2530

$0.5097

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