N-Channel Power Trench® MOSFET 150V, 9.4a, 134mΩ

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Overview

This N-Channel MOSFET is produced using an advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

  • This product is general usage and suitable for many different applications.
  • Max rDS(on) = 134 mΩ at VGS = 10 V, ID = 2.8 A
  • Max rDS(on) = 186 mΩ at VGS = 6 V, ID = 2.4 A
  • Low Profile - 1 mm max in Power 33
  • 100% UIL Tested
  • RoHS Compliant

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDMC86244

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Active

CAD Model

Pb

A

H

P

WDFN-8

1

260

REEL

3000

Y

150

134

N-Channel

Single

±20

4

9.4

26

-

-

-

2.4

257

$0.4221

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