FDMC86244: N-Channel Power Trench® MOSFET 150V, 9.4a, 134mΩ

Datasheet: MOSFET – N-Channel, Shielded Gate, POWERTRENCH® 150 V, 9.4 A, 134 mΩ
Rev. 3 (490kB)
Product Overview
View Reliability Data
View Material Composition
Product Change Notification
This N-Channel MOSFET is produced using an advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
Features
 
  • Max rDS(on) = 134 mΩ at VGS = 10 V, ID = 2.8 A
  • Max rDS(on) = 186 mΩ at VGS = 6 V, ID = 2.4 A
  • Low Profile - 1 mm max in Power 33
  • 100% UIL Tested
  • RoHS Compliant
Applications
  • This product is general usage and suitable for many different applications.
Evaluation/Development Tool Information
Product Status Compliance Short Description Action
STR-60-100V-BLDC-MDK-GEVB Active
Pb-free
1kW, 60-100V Motor Development Board
STR-60-100V-BLDC-MDK-GEVK Active
Pb-free
1kW, 60-100V Motor Development Board
Availability & Samples
Specifications
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
FDMC86244 Active
Pb-free
Halide free
FDMC86244 WDFN-8 511DR 1 260 Tape and Reel 3000 $0.4221
Market Leadtime (weeks) : Contact Factory

Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
V(BR)DSS Min (V)
VGS Max (V)
VGS(th) Max (V)
ID Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
RDS(on) Max @ VGS = 10 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Package Type
FDMC86244  
 $0.4221 
Pb
H
 Active   
N-Channel
Single
150
±20
4
9.4
26
-
-
134
-
2.4
257
WDFN-8
Case Outlines
511DR   
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