FDMC8554: N-Channel Power Trench® MOSFET 20V, 16.5A, 5mΩ

Datasheet: FDMC8554-D.pdf
Rev. A (480kB)
Product Overview
View Reliability Data
View Material Composition
Product Change Notification
This N-Channel MOSFET is a rugged gate version of an advanced Power Trench process. It has been optimized for switching performance and ultra low rDS(on).
Features
 
  • Max rDS(on) = 5mΩ at VGS = 10V, ID = 16.5A
  • Max rDS(on) = 6.4mΩ at VGS = 4.5V, ID = 14A
  • Low Profile - 1mm max in Power 33
  • RoHS Compliant
Applications
  • This product is general usage and suitable for many different applications.
Availability & Samples
Specifications
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
FDMC8554 Active
Pb-free
Halide free
FDMC8554 WDFN-8 511DH 1 260 Tape and Reel 3000 $0.5417
Market Leadtime (weeks) : Contact Factory

Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
V(BR)DSS Min (V)
VGS Max (V)
VGS(th) Max (V)
ID Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
RDS(on) Max @ VGS = 10 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Package Type
FDMC8554  
 $0.5417 
Pb
H
 Active   
N-Channel
Single
20
20
3
16.5
41
-
6.4
5
12
24
2540
WDFN-8
Case Outlines
511DH   
Previously Viewed Products
Clear List

Your request has been submitted for approval.
Please allow 2-5 business days for a response.
You will receive an email when your request is approved.
Request for this document already exists and is waiting for approval.