FDMC610P

P-Channel PowerTrench^® MOSFET -12V. -80A, 3.9mΩ

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CAD Model

Overview

This P-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low r_DS(on), fast switching speed and body diode reverse recovery performance.

Applications

This product is general usage and suitable for many different applications.

Features

Max r_DS(on) = 3.9 mΩ at V_GS = -4.5 V, I_D = -22 A
Max r_DS(on) = 6.4 mΩ at V_GS = -2.5 V, I_D = -16 A
State-of-the-art switching performance
Lower output capacitance, gate resistance, and gate charge boost efficiency
Shielded gate technology reduces switch node ringing and increases immunity to EMI and cross conduction
RoHS Compliant

Material Composition

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Channel Polarity

Configuration

V_(BR)DSS Min (V)

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Pricing ($/Unit)

FDMC610P

Active

PQFN-8

483AK

260

REEL

3000

P-Channel

Single

-12

-1

-80

6.4

3.9

890

$0.69

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MOSFETs | FDMC610P

P-Channel PowerTrench® MOSFET -12V. -80A, 3.9mΩ

Overview

Availability & Samples (size)

Email Sales

P-Channel PowerTrench^® MOSFET -12V. -80A, 3.9mΩ