FDMC2610: N-Channel UltraFET Trench® MOSFET 200V, 9.5A, 200mΩ

Datasheet: FDMC2610-D.pdf
Rev. A (542kB)
Product Overview
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View Material Composition
Product Change Notification
This N-Channel MOSFET is a rugged gate version of an advanced Power Trench process. It has been optimized for power management applications.
Features
 
  • Max rDS(on) = 200mΩ at VGS = 10V, ID = 2.2A
  • Max rDS(on) = 215mΩ at VGS = 6V, ID = 1.5A
  • Low Profile - 1mm max in a MicroFET 3.3 x 3.3 mm
  • RoHS Compliant
Applications
  • This product is general usage and suitable for many different applications.
Availability & Samples
Specifications
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
FDMC2610 Active
Pb-free
Halide free
FDMC2610 WDFN-8 511DH 1 260 Tape and Reel 3000 $0.9144
Market Leadtime (weeks) : Contact Factory

Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
V(BR)DSS Min (V)
VGS Max (V)
VGS(th) Max (V)
ID Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
RDS(on) Max @ VGS = 10 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Package Type
FDMC2610  
 $0.9144 
Pb
H
 Active   
N-Channel
Single
200
±20
4
9.5
42
-
-
200
7.1
12.3
720
WDFN-8
Case Outlines
511DH   
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