FDMC012N03: N-Channel Power Trench® MOSFET 30 V, 1.23 mΩ

Datasheet: FDMC012N03 N-Channel Power Trench® MOSFET
Rev. A (505kB)
Product Overview
View Reliability Data
View Material Composition
Product Change Notification
This N-Channel MOSFET is produced using an advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
Features
 
  • Max rDS(on) = 1.23 mΩ at VGS = 10 V, ID = 35 A
  • Max rDS(on) = 1.46 mΩ at VGS = 4.5 V, ID = 32 A
  • High performance technology for extremely low rDS(on)
  • Termination is Lead-free
  • RoHS Compliant
Applications
  • This product is general usage and suitable for many different applications.
Availability & Samples
Specifications
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
FDMC012N03 Active
Pb-free
Halide free
FDMC012N03 PQFN-8 483AW 1 260 Tape and Reel 3000 $0.662
Market Leadtime (weeks) : Contact Factory

Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
V(BR)DSS Min (V)
VGS Max (V)
VGS(th) Max (V)
ID Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
RDS(on) Max @ VGS = 10 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Package Type
FDMC012N03  
 $0.662 
Pb
H
 Active   
N-Channel
Single
30
12
2
35
64
-
1.46
1.23
-
35
5845
PQFN-8
Case Outlines
483AW   
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