FDMA86265P: P-Channel PowerTrench® MOSFET -150V, -1A, 1.2Ω

Datasheet: FDMA86265P P-Channel PowerTrench MOSFET
Rev. 2 (888kB)
Product Overview
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Product Change Notification
This P-Channel MOSFET is produced using an advanced PowerTrench® process that has been optimized for the on-state resistance and yet maintain superior switching performance.
Features
 
  • Max rDS(on) = 1.2 Ω at VGS = -10 V, ID = -1 A
  • Max rDS(on) = 1.4 Ω at VGS = -6 V, ID = -0.9 A
  • Low Profile - 0.8 mm maximum in the new package MicroFET 2x2 mm
  • Very low RDS-on mid voltage P-channel silicon technology optimised for low Qg
  • This product is optimised for fast switching applications as well as load switch applications
  • 100% UIL tested
  • RoHS Compliant
Applications
  • This product is general usage and suitable for many different applications.
Availability & Samples
Specifications
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
FDMA86265P Active
Pb-free
Halide free
FDMA86265P WDFN-6 511CZ 1 260 Tape and Reel 3000 $0.3712
Market Leadtime (weeks) : Contact Factory

Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
V(BR)DSS Min (V)
VGS Max (V)
VGS(th) Max (V)
ID Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
RDS(on) Max @ VGS = 10 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Package Type
FDMA86265P  
 $0.3712 
Pb
H
 Active   
P-Channel
Single
-150
±25
-4
-1
2.4
-
-
1200
18
2.8
158
WDFN-6
Case Outlines
511CZ   
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