N-Channel PowerTrench® MOSFET, 1.5 V Specified, 20V, 9.5A, 23mΩ

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Overview

This Single N-Channel MOSFET has been designed using an advanced Power Trench process to optimize the rDS(ON) @ VGS = 1.5 V on special MicroFET leadframe.

  • This product is general usage and suitable for many different applications.
  • Max rDS(on) = 23 mΩ at VGS = 4.5 V, ID = 9.5 A
  • Max rDS(on) = 29 mΩ at VGS = 2.5 V, ID = 8.0 A
  • Max rDS(on) = 36 mΩ at VGS = 1.8 V, ID = 4.0 A
  • Max rDS(on) = 50 mΩ at VGS = 1.5 V, ID = 2.0 A
  • HBM ESD protection level > 2.5 kV (Note 3)
  • Low Profile-0.8 mm maximum in the new package MicroFET 2x2 mm
  • Free from halogenated compounds and antimony oxides
  • RoHS Compliant

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDMA410NZ

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Active

CAD Model

Pb

A

H

P

WDFN-6

1

260

REEL

3000

N

20

-

N-Channel

Single

8

1

9.5

2.4

29

23

8.8

10

815

$0.3215

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