FDMA410NZ: N-Channel PowerTrench® MOSFET, 1.5 V Specified, 20V, 9.5A, 23mΩ

Datasheet: FDMA410NZ-D.pdf
Rev. A (605kB)
Product Overview
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Product Change Notification
This Single N-Channel MOSFET has been designed using an advanced Power Trench process to optimize the rDS(ON) @ VGS = 1.5 V on special MicroFET leadframe.
Features
 
  • Max rDS(on) = 23 mΩ at VGS = 4.5 V, ID = 9.5 A
  • Max rDS(on) = 29 mΩ at VGS = 2.5 V, ID = 8.0 A
  • Max rDS(on) = 36 mΩ at VGS = 1.8 V, ID = 4.0 A
  • Max rDS(on) = 50 mΩ at VGS = 1.5 V, ID = 2.0 A
  • HBM ESD protection level > 2.5 kV (Note 3)
  • Low Profile-0.8 mm maximum in the new package MicroFET 2x2 mm
  • Free from halogenated compounds and antimony oxides
  • RoHS Compliant
Applications
  • This product is general usage and suitable for many different applications.
Availability & Samples
Specifications
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
FDMA410NZ Active
Pb-free
Halide free
FDMA410NZ WDFN-6 511CZ 1 260 Tape and Reel 3000 $0.3215
Market Leadtime (weeks) : Contact Factory

Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
V(BR)DSS Min (V)
VGS Max (V)
VGS(th) Max (V)
ID Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
RDS(on) Max @ VGS = 10 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Package Type
FDMA410NZ  
 $0.3215 
Pb
H
 Active   
N-Channel
Single
20
8
1
9.5
2.4
29
23
-
8.8
10
815
WDFN-6
Case Outlines
511CZ   
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