MOSFETs | FDMA2002NZ

Dual N-Channel PowerTrench® MOSFET 30V, 2.9A, 123mΩ

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Overview

This device is designed specifically as a single package solution for dual switching requirements in cellular handset and other ultra-portable applications. It features two independent N-Channel MOSFETs with low on-state resistance for minimum conduction losses. The MicroFET 2x2 offers exceptional thermal performance for its physical size and is well suited to linear mode applications.

  • This product is general usage and suitable for many different applications.
  • 2.9 A, 30 V
  • RDS(ON) = 123 mΩ @ VGS = 4.5 V
  • RDS(ON) = 140 mΩ @ VGS = 3.0 V
  • RDS(ON) = 163 mΩ @ VGS = 2.5 V
  • Low profile - 0.8 mm maximum - in the new package MicroFET 2x2 mm
  • HBM ESD protection level=1.8kV (Note 3)
  • RoHS Compliant
  • Free from halogenated compounds and antimonyoxides

Material Composition

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Configuration

V(BR)DSS Min (V)

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

RDS(on) Max @ VGS = 10 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Pricing ($/Unit)

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FDMA2002NZ

Active

Pb

A

H

P

WDFN-6

511DA

1

260

REEL

3000

Y

N-Channel

Dual

30

12

1.5

2.9

1.5

Q1=Q2=163

Q1=Q2=123

-

4.1

2.4

190

$0.3071

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