FDG6322C: Dual N & P Channel Digital FET 25V

Datasheet: Dual N & P Channel Digital FET
Rev. 6 (250kB)
Product Overview
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Product Change Notification
These dual N & P-Channel logic level enhancement mode field effect transistors are produced using a proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs. Since bias resistors are not required, this dual digital FET can replace several different digital transistors, with different bias resistor values.
Features
 
  • N-Ch 0.22 A, 25 V,
    RDS(ON) = 4.0 Ω @ VGS= 4.5 V,
    RDS(ON) = 5.0 Ω @ VGS= 2.7 V
  • P-Ch -0.41 A,-25V,
    RDS(ON) = 1.1 Ω @ VGS= -4.5V,
    RDS(ON) = 1.5 Ω @ VGS= -2.7V.
  • Very small package outline SC70-6.
  • Very low level gate drive requirements allowing direct operation in 3 V circuits (V GS(th) < 1.5 V)
  • Gate-Source Zener for ESD ruggedness (>6k V Human Body Model).
Applications
  • This product is general usage and suitable for many different applications.
Availability & Samples
Specifications
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
FDG6322C Active
Pb-free
Halide free
FDG6322C SC-88-6 / SC-70-6 / SOT-363-6 419B-02 1 260 Tape and Reel 3000 $0.1336
Market Leadtime (weeks) : Contact Factory
Avnet   (2020-08-19) : >1K

Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
V(BR)DSS Min (V)
VGS Max (V)
VGS(th) Max (V)
ID Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
RDS(on) Max @ VGS = 10 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Package Type
FDG6322C  
 $0.1336 
Pb
H
 Active   
Complementary
Dual
±25
-8
±1.5
N:0.22 , P: -0.41
0.3
N:5000, P:1500
N: 450, P: 1100
-
-
1.1
62
SC-88-6 / SC-70-6 / SOT-363-6
Case Outlines
419B-02   
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