FDG6317NZ: Dual 20V N-Channel PowerTrench® MOSFET, 0.7 A, 400 mΩ

Datasheet: MOSFET — Dual, N-Channel, POWERTRENCH® 20 V, 2.1 A, 550 mΩ
Rev. 2 (159kB)
Product Overview
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Product Change Notification
This dual N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized use in small switching regulators, providing an extremely low RDS(ON) and gate charge (QG) in a small package.
Features
 
  • 0.7A, 20V
  • RDS(ON) = 400 mΩ @ VGS = 4.5V
  • RDS(ON) = 500 mΩ @ VGS = 2.5V
  • ESD protection diode (note 3)
  • Low gate charge
  • High performance trench technology for extremelylow RDS(ON)
  • Compact industry standard SC70-6 surface mountpackage
Applications
  • This product is general usage and suitable for many different applications.
Availability & Samples
Specifications
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
FDG6317NZ Active
Pb-free
Halide free
FDG6317NZ SC-88-6 / SC-70-6 / SOT-363-6 419B-02 1 260 Tape and Reel 3000 $0.0719
Market Leadtime (weeks) : Contact Factory
Avnet   (2020-08-19 00:00) : >50K

Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
V(BR)DSS Min (V)
VGS Max (V)
VGS(th) Max (V)
ID Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
RDS(on) Max @ VGS = 10 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Package Type
FDG6317NZ  
 $0.0719 
Pb
H
 Active   
N-Channel
Dual
20
12
1.5
0.7
0.3
Q1=Q2=550
Q1=Q2=400
-
0.76
1.08
0.76
66.5
SC-88-6 / SC-70-6 / SOT-363-6
Case Outlines
419B-02   
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