FDG6303N: Dual N-Channel Digital FET 25V, 0.50A, 0.45Ω

Datasheet: Digital FET, Dual N-Channel
Rev. 8 (187kB)
Product Overview
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Product Change Notification
These dual N-Channel logic level enhancement mode field effect transistors are produced using a proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETS.
Features
 
  • 25 V, 0.50 A continuous, 1.5 A Peak.
  • RDS(ON) = 0.45 Ω @ VGS= 4.5 V,
  • RDS(ON) = 0.60 Ω @ VGS= 2.7 V.
  • Very low level gate drive requirements allowing direct operation in 3 V circuits (VGS(th) <1.5 V).
  • Gate-Source Zener for ESD ruggedness (>6kV Human Body Model).
  • Compact industry standard SC70-6 surface mount package.
Applications
  • This product is general usage and suitable for many different applications.
Availability & Samples
Specifications
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
FDG6303N Active
Pb-free
Halide free
FDG6303N SC-88-6 / SC-70-6 / SOT-363-6 419B-02 1 260 Tape and Reel 3000 $0.0879
FDG6303N-F169 Obsolete
Pb-free
Halide free
FDG6303N SC-88-6 / SC-70-6 / SOT-363-6 419AD 1 260 Tape and Reel 3000  
Market Leadtime (weeks) : Contact Factory
Avnet   (2020-08-19) : >100K
Market Leadtime (weeks) : Contact Factory

Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
V(BR)DSS Min (V)
VGS Max (V)
VGS(th) Max (V)
ID Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
RDS(on) Max @ VGS = 10 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Package Type
FDG6303N  
 $0.0879 
Pb
H
 Active   
N-Channel
Dual
25
8
1.5
0.5
0.3
Q1=Q2=600
Q1=Q2=450
-
1.4
1.64
50
SC-88-6 / SC-70-6 / SOT-363-6
Case Outlines
419AD    419B-02   
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