MOSFETs | FDG1024NZ

Dual N-Channel PowerTrench® MOSFET 20 V, 1.2 A, 175 mΩ

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Overview

This dual N-Channel logic level enhancement mode field effect transistors are produced using a proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs. Since bias resistors are not required, this dual digital FET can replace several different digital transistors, with different bias resistor values.

  • This product is general usage and suitable for many different applications.
  • Max rDS(on) = 175 mO at VGS = 4.5 V, ID = 1.2 A
  • Max rDS(on) = 215 mO at VGS = 2.5 V, ID = 1.0 A
  • Max rDS(on) = 270 mO at VGS = 1.8 V, ID = 0.9 A
  • Max rDS(on) = 389 mO at VGS = 1.5 V, ID = 0.8 A
  • HBM ESD protection level >2 kV (Note 3)
  • Very low level gate drive requirements allowing operation in 1.5 V circuits (VGS(th) < 1 V)
  • Very small package outline SC70-6
  • RoHS Compliant

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

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ON Target

Channel Polarity

Configuration

V(BR)DSS Min (V)

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

RDS(on) Max @ VGS = 10 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Pricing ($/Unit)

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FDG1024NZ

Active

Pb

A

H

P

SC-88-6 / SC-70-6 / SOT-363-6

419AD

1

260

REEL

3000

N

N-Channel

Dual

20

8

1

1.2

0.36

Q1=Q2=215

Q1=Q2=175

-

-

1.8

115

$0.2211

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