FDD86326

N-Channel Shielded Gate PowerTrench^® MOSFET 80 V, 37 A, 23 mΩ

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Overview

This N-Channel MOSFET is produced using an advanced Power Trench^® process that has been optimized for r_DS(on), switching performance and ruggedness.

Applications

This product is general usage and suitable for many different applications.

Features

Shielded Gate MOSFET Technology
Max r_DS(on) = 23 mΩ at V_GS = 10 V, I_D= 8 A
Max r_DS(on) = 37 mΩ at V_GS = 6 V, I_D = 4.6 A
High performance trench technology for extremely low r_DS(on)
High power and current handling capability in a widely usedsurface mount package
Very low Qg and Qgd compared to competing trenchtechnologies
Fast switching speed
100% UIL tested
RoHS Compliant

Material Composition

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MSL Temp (°C)

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Container Qty.

Channel Polarity

Configuration

V_(BR)DSS Min (V)

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Pricing ($/Unit)

FDD86326

Active

DPAK-3 / TO-252-3

369AS

260

REEL

2500

N-Channel

Single

±20

7.6

780

$0.8002

Product Number:

Distributor		Stock	BUY

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MOSFETs | FDD86326

N-Channel Shielded Gate PowerTrench® MOSFET 80 V, 37 A, 23 mΩ

Overview

Availability & Samples (size)

Email Sales

N-Channel Shielded Gate PowerTrench^® MOSFET 80 V, 37 A, 23 mΩ