FDD86102: N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 36 A, 24 mΩ

Datasheet: FDD86102-D.pdf
Rev. A (581kB)
Product Overview
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Product Change Notification
This N-Channel MOSFET is produced using an advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness.
Features
 
  • Max rDS(on) = 24 mΩ at VGS = 10 V, ID = 8 A
  • Max rDS(on) = 38 mΩ at VGS = 6 V, ID = 6 A
  • High performance trench technology for extremely low rDS(on)
  • High power and current handling capability in a widely used surface mount package
  • Very low Qg and Qgd compared to competing trench technologies
  • Fast switching speed
  • 100% UIL tested
  • RoHS Compliant
Applications
  • This product is general usage and suitable for many different applications.
Availability & Samples
Specifications
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
FDD86102 Active
Pb-free
Halide free
FDD86102 DPAK-3 / TO-252-3 369AS 1 260 Tape and Reel 2500 $0.6456
Market Leadtime (weeks) : Contact Factory

Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
V(BR)DSS Min (V)
VGS Max (V)
VGS(th) Max (V)
ID Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
RDS(on) Max @ VGS = 10 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Package Type
FDD86102  
 $0.6456 
Pb
H
 Active   
N-Channel
Single
100
±20
4
36
62
-
-
24
-
7.6
780
DPAK-3 / TO-252-3
Case Outlines
369AS   
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