FDD7N20TM: Power MOSFET, N-Channel, UniFETTM, 200 V, 5 A, 690 mΩ, DPAK

Datasheet: FDD7N20TM-D.pdf
Rev. A (717kB)
Product Overview
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Product Change Notification
UniFETTM MOSFET is a high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
Features
 
  • RDS(on) = 580mΩ (Typ.)@ VGS = 10V, ID = 2.5A
  • Low gate charge (Typ. 5nC)
  • Low Crss (Typ. 5pF)
  • 100% avalanche tested
  • RoHS compliant
Applications
  • This product is general usage and suitable for many different applications.
Technical Documentation & Design Resources
Application Notes (12) Package Drawings (1)
Data Sheets (1)  
Availability & Samples
Specifications
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
FDD7N20TM Active
Pb-free
Halide free
FDD7N20TM DPAK-3 / TO-252-3 369AS 1 260 Tape and Reel 2500 $0.2735
Market Leadtime (weeks) : 13 to 16

Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
V(BR)DSS Min (V)
VGS Max (V)
VGS(th) Max (V)
ID Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
RDS(on) Max @ VGS = 10 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Package Type
FDD7N20TM  
 $0.2735 
Pb
H
 Active   
N-Channel
Single
200
±30
5
5
43
-
-
690
-
5
185
DPAK-3 / TO-252-3
Case Outlines
369AS   
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