MOSFETs | FDC6420C

N & P-Channel PowerTrench® MOSFETs 20V

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Overview

These N & P-Channel MOSFETs are produced using an advanced PowerTrench® process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical.

  • This product is general usage and suitable for many different applications.
  • Q1 3.0 A, 20V
  • RDS(on) = 70 mΩ@ VGS = 4.5 V
  • RDS(on) = 95 mΩ @ VGS = 2.5 V
  • Q2 –2.2 A, 20V.
  • RDS(on) = 125 mΩ@ VGS = -4.5 V
  • RDS(on) = 190 mΩ @ VGS = -2.5 V
  • Low gate charge
  • High performance trench technology for extremely low RDS(ON)
  • SuperSOT –6 package: small footprint (72% smaller thanSO-8); low profile (1mm thick).

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Configuration

V(BR)DSS Min (V)

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

RDS(on) Max @ VGS = 10 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Pricing ($/Unit)

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FDC6420C

Active

Pb

A

H

P

TSOT-23-6

419BL

1

260

REEL

3000

Y

Complementary

Dual

±20

12

1.5

N: 3.0 , P: -2.2

0.96

N: 95, P: 190

N: 70, P: 125

-

2.3

3.7

337

$0.2133

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