FDC638APZ

P-Channel PowerTrench^® MOSFET, 2.5V specified, -20V, -4.5A, 43mΩ

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Overview

This P-Channel MOSFET is produced using an advanced PowerTrench^® process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance
These devices are well suited for battery power applications:load switching and power management,battery charging circuits,and DC/DC conversion.

Applications

This product is general usage and suitable for many different applications.

Features

Max r_DS(ON) = 43mΩ at V_GS = -4.5V, I_D = -4.5A
Max r_DS(ON) = 68mΩ at V_GS = -2.5V, I_D = -3.8A
Low gate charge (8nC typical).
High performance trench technology for extremely low r_DS(on)
SuperSOT™ -6 package:small footprint (72% smaller than standard SO¨C8) low profile (1mm thick).
RoHS Compliant
Manufactured using Green packaging materials.
Halide free

Material Composition

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MSL Temp (°C)

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Container Qty.

Channel Polarity

Configuration

V_(BR)DSS Min (V)

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Pricing ($/Unit)

FDC638APZ

Active

TSOT-23-6

419BL

260

REEL

3000

P-Channel

Single

-20

-1.5

-4.5

1.6

750

$0.1805

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MOSFETs | FDC638APZ

P-Channel PowerTrench® MOSFET, 2.5V specified, -20V, -4.5A, 43mΩ

Overview

Availability & Samples (size)

Email Sales

P-Channel PowerTrench^® MOSFET, 2.5V specified, -20V, -4.5A, 43mΩ