MOSFETs | FDC637AN

N-Channel PowerTrench® MOSFET, 2.5V Specified, 20V, 6.2A, 24mΩ

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Overview

This N-Channel 2.5V specified MOSFET is produced using an advanced PowerTrench® process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint compared with bigger SO-8 and TSSOP-8 packages.

  • This product is general usage and suitable for many different applications.
  • 6.2 A, 20 V
     RDS(on) = 0.024 Ω @ VGS = 4.5 V
     RDS(on) = 0.032 Ω @ VGS = 2.5 V
  • Fast switching speed.
  • Low gate charge (10.5nC typical).
  • High performance trench technology for extremelylow RDS(ON) .
  • SuperSOT™ -6 package: small footprint (72% smallerthan standard SO-8); low profile (1mm thick).

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Configuration

V(BR)DSS Min (V)

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

RDS(on) Max @ VGS = 10 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Pricing ($/Unit)

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FDC637AN

Active

Pb

A

H

P

TSOT-23-6

419BL

1

260

REEL

3000

Y

N-Channel

Single

20

8

1.5

6.2

1.6

32

24

-

8

10.5

1125

$0.2688

More Details

FDC637AN-NB5E023A

Last Shipments

Pb

A

H

P

TSOT-23-6

419BL

1

260

REEL

3000

N

N-Channel

Single

20

8

1.5

6.2

1.6

32

24

-

8

10.5

1125

Price N/A

More Details

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