Dual N & P-Channel PowerTrench® MOSFET, 2.5V Specified

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Overview

These N & P-Channel 2.5V specified MOSFETs are produced using an advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical.

  • This product is general usage and suitable for many different applications.
  • N-Channel
     2.7A, 20V
     RDS(on) = 0.08Ω @ VGS = 4.5V
     RDS(on) = 0.12Ω @ VGS = 2.5V
  • P-Channel
     -1.6A, -20V
     RDS(on) = 0.17Ω @ VGS = -4.5V
     RDS(on) = 0.25Ω @ VGS = -2.5V
  • Fast switching speed.
  • Low gate charge.
  • High performance trench technology for extremelylow RDS(ON) .
  • SuperSOT™ -6 package: small footprint (72% smallerthan standard SO-8); low profile (1mm thick).

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Configuration

V(BR)DSS Min (V)

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

RDS(on) Max @ VGS = 10 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Pricing ($/Unit)

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FDC6327C

Active

Pb

A

H

P

TSOT-23-6

1

260

REEL

3000

Y

Complementary

Dual

±20

8

±1.5

N:2.7 , P: -1.6

0.96

N:120, P:250

N: 80, P: 170

-

3.7

2.85

315

$0.1629

More Details

FDC6327C-F169

Obsolete

Pb

A

H

P

TSOT-23-6

1

260

REEL

3000

N

Complementary

Dual

20

-

8

-1.9

0.96

N:120 P:250

N: 80, P: 170

250

-

-

325

Price N/A

More Details

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