FDC6318P

Dual P-Channel PowerTrench^® MOSFET, 1.8V specified, -12V, -2.5A, 90mΩ

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Overview

These P-Channel 1.8V specified MOSFETs are produced using an advanced PowerTrench^® process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance.

Applications

This product is general usage and suitable for many different applications.

Features

-2.5A, -12V
R_DS(ON) = 90mΩ @ V_GS = -4.5V
R_DS(ON) = 125mΩ @ V_GS = -2.5V
R_DS(ON) = 200mΩ @ V_GS = -1.8V
High performance trench technology for extremely low R_DS(ON)
SuperSOT™-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick)

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Container Qty.

Channel Polarity

Configuration

V_(BR)DSS Min (V)

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Pricing ($/Unit)

FDC6318P

Active

TSOT-23-6

419BL

260

REEL

3000

P-Channel

Single

-12

-1.5

-2.5

0.96

125

5.4

455

$0.2976

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MOSFETs | FDC6318P

Dual P-Channel PowerTrench® MOSFET, 1.8V specified, -12V, -2.5A, 90mΩ

Overview

Availability & Samples (size)

Email Sales

Dual P-Channel PowerTrench^® MOSFET, 1.8V specified, -12V, -2.5A, 90mΩ