Dual P-Channel PowerTrench® MOSFET, 1.8V specified, -12V, -2.5A, 90mΩ

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Overview

These P-Channel 1.8V specified MOSFETs are produced using an advanced PowerTrench® process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance.

  • This product is general usage and suitable for many different applications.
  • -2.5A, -12V
     RDS(ON) = 90mΩ @ VGS = -4.5V
     RDS(ON) = 125mΩ @ VGS = -2.5V
     RDS(ON) = 200mΩ @ VGS = -1.8V
  • High performance trench technology for extremely low RDS(ON)
  • SuperSOT™-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick)

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CAD Models

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

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ON Target

Channel Polarity

Configuration

V(BR)DSS Min (V)

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

RDS(on) Max @ VGS = 10 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Pricing ($/Unit)

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FDC6318P

Active

Pb

A

H

P

TSOT-23-6

1

260

REEL

3000

Y

P-Channel

Single

-12

8

-1.5

-2.5

0.96

125

90

-

-

5.4

455

$0.2976

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