MOSFETs | FDC6312P

Dual P-Channel PowerTrench® MOSFET, 1.8V Specified, -20V, -2.3A, 115mΩ

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Overview

These P-Channel 1.8V specified MOSFETs are produced using an advanced PowerTrench® process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance.

  • This product is general usage and suitable for many different applications.
  • –2.3 A, –20 V.
  • RDS(ON) = 115 mΩ @ VGS = –4.5 V
  • RDS(ON) = 155 mΩ @ VGS = –2.5 V
  • RDS(ON) = 225 mΩ @ VGS = –1.8 V
  • High performance trench technology for extremely low RDS(ON)
  • SuperSOT™-6 package: small footprint (72%smaller than standard SO-8); low profile (1mm thick)

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Configuration

V(BR)DSS Min (V)

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

RDS(on) Max @ VGS = 10 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Pricing ($/Unit)

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FDC6312P

Active

Pb

A

H

P

TSOT-23-6

419BL

1

260

REEL

3000

Y

P-Channel

Dual

-20

8

-1.5

-2.3

0.96

Q1=Q2=155

Q1=Q2=115

-

-

4.4

467

$0.196

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