Dual P-Channel PowerTrench® MOSFET, 2.5V Specified, -20V, -2.2A, 125mΩ

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Overview

These P-Channel 2.5V specified MOSFETs are produced using an advanced PowerTrench® process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical.

  • This product is general usage and suitable for many different applications.
  • -2.2 A, -20 V
  • RDS(on) = 125m Ω @ VGS = -4.5 V
  • RDS(on) = 190m Ω @ VGS = -2.5 V
  • Low gate charge
  • Fast switching speed
  • High performance trench technology for extremelylow RDS(ON)
  • SuperSOT™ -6 package: small footprint 72%smaller than standard SO-8; low profile (1mm thick)

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDC6310P

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Active

CAD Model

Pb

A

H

P

TSOT-23-6

1

260

REEL

3000

Y

-20

-

P-Channel

Dual

12

-1.5

-2.2

0.96

Q1=Q2=190

Q1=Q2=125

5.4

3.7

337

$0.2105

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