Dual P-Channel PowerTrench® MOSFET, 2.5V Specified, -20V, -1.9A, 170mΩ

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Overview

These P-Channel 2.5V specified MOSFETs are produced using an advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical.

  • This product is general usage and suitable for many different applications.
  • -1.9 A, -20 V
  • RDS(on) = 0.170 Ω @ VGS = -4.5 V
  • RDS(on) = 0.250 Ω @ VGS = -2.5 V
  • Low gate charge (2.3nC typical)
  • Fast switching speed
  • High performance trench technology for extremely low RDS(ON)
  • SuperSOT™-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick)

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDC6306P

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Active

CAD Model

Pb

A

H

P

TSOT-23-6

1

260

REEL

3000

Y

-20

-

P-Channel

Dual

8

-1.5

-1.9

0.96

Q1=Q2=250

Q1=Q2=170

4.4

3

441

$0.1867

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