Dual N-Channel Digital FET 25V, 0.22A, 4Ω

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Overview

These dual N-Channel logic level enhancement mode field effect transistors are produced using a proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for digital transistors. Since bias resistors are not required, these N-Channel FET's can replace several digital transistors, with a variety of bias resistors.

  • This product is general usage and suitable for many different applications.
  • 25 V, 0.22 A continuous, 0.5 A Peak
  • RDS(ON) = 5 Ω @ VGS= 2.7 V
  • RDS(ON) = 4 Ω @ VGS= 4.5 V
  • Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) < 1.5V
  • Gate-Source Zener for ESD ruggedness. >6kV Human Body Model

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDC6301N

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Active

CAD Model

Pb

A

H

P

TSOT-23-6

1

260

REEL

3000

Y

25

-

N-Channel

Dual

8

1.5

0.22

0.9

Q1=Q2=5000

Q1=Q2=4000

1.64

0.49

9.5

$0.1036

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