P-Channel PowerTrench® MOSFET, 2.5V Specified, -20V, -5.8A, 30mΩ

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Overview

This P-Channel 2.5V specified MOSFET is produced using ON Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for battery power applications: load switching and power management, battery power circuits, and DC/DC conversions.

  • This product is general usage and suitable for many different applications.
  • -5.8A, -20V, RDS(on) = 30mΩ @ VGS = -4.5V RDS(on) = 43mΩ @ VGS = -2.5V
  • Low gate charge
  • High performance trench technology for extremely low RDS(on)
  • SuperSOT ¨C6 package: small footprint (72% smaller than standard SO¨C8) low profile (1mm thick)

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDC608PZ

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Active

CAD Model

Pb

A

H

P

TSOT-23-6

1

260

REEL

3000

N

-20

-

P-Channel

Single

12

-1.5

-5.8

1.6

43

30

7.2

17

1330

$0.1824

More Details

FDC608PZ-F171

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Obsolete

CAD Model

Pb

A

H

P

TSOT-23-6

1

260

REEL

3000

N

-20

-

P-Channel

Single

12

-1.5

-5.8

1.6

43

30

7.2

17

1330

Price N/A

More Details

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