N-Channel PowerTrench® MOSFET 100V 2.6A, 125mΩ

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Overview

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.

  • This product is general usage and suitable for many different applications.
  • 2.6 A, 100 V
  • RDS(on) = 125 mΩ@ VGS = 10 V
  • RDS(on) = 135 mΩ @ VGS = 6 V
  • High performance trench technology for extremely low RDS(ON)
  • Low gate charge (14nC typical)
  • High power and current handling capability
  • Fast switching speed

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDC3612

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Active

CAD Model

Pb

A

H

P

TSOT-23-6

1

260

REEL

3000

Y

100

125

N-Channel

Single

±20

4

2.6

1.6

-

-

-

14

660

$0.2039

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