FDC3612: N-Channel PowerTrench® MOSFET 100V 2.6A, 125mΩ

Datasheet: 100V N-Channel PowerTrench MOSFET
Rev. 2 (486kB)
Product Overview
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Product Change Notification
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
Features
 
  • 2.6 A, 100 V
  • RDS(on) = 125 mΩ@ VGS = 10 V
  • RDS(on) = 135 mΩ @ VGS = 6 V
  • High performance trench technology for extremely low RDS(ON)
  • Low gate charge (14nC typical)
  • High power and current handling capability
  • Fast switching speed
Applications
  • This product is general usage and suitable for many different applications.
Availability & Samples
Specifications
Interactive Block Diagram
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
FDC3612 Active
Pb-free
Halide free
FDC3612 TSOT-23-6 419BL 1 260 Tape and Reel 3000 $0.2069
Market Leadtime (weeks) : Contact Factory

Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
V(BR)DSS Min (V)
VGS Max (V)
VGS(th) Max (V)
ID Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
RDS(on) Max @ VGS = 10 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Package Type
FDC3612  
 $0.2069 
Pb
H
 Active   
N-Channel
Single
100
±20
4
2.6
1.6
-
-
125
-
14
660
TSOT-23-6
Case Outlines
419BL   
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