MOSFETs | FDC3601N

Dual N-Channel 100V Specified PowerTrench® MOSFET 1.0A, 500mΩ

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Overview

These N-Channel 100V specified MOSFETs are produced using an advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical.

  • This product is general usage and suitable for many different applications.
  • 1.0 A, 100 V
  • RDS(on) = 500 mΩ@ VGS = 10 V
  • RDS(on) = 550 mΩ @ VGS = 6 V
  • Low gate charge (3.7nC typical)
  • Fast switching speed
  • High performance trench technology for extremely low RDS(ON)
  • SuperSOT™-6 package: small footprint 72%(smaller than standard SO-8); low profile (1mm thick)

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Configuration

V(BR)DSS Min (V)

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

RDS(on) Max @ VGS = 10 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Pricing ($/Unit)

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FDC3601N

Active

Pb

A

H

P

TSOT-23-6

419BL

1

260

REEL

3000

Y

N-Channel

Single

100

±20

4

1

0.96

-

-

500

-

3.7

153

$0.1945

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