N-Channel PowerTrench® MOSFET 200V 1.1A, 725mΩ

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Overview

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.

  • This product is general usage and suitable for many different applications.
  • 1.1 A, 200V
  • RDS(on) = 725 mΩ@ VGS = 10 V
  • High performance trench technology for extremely low RDS(ON)
  • High power and current handling capability
  • Fast switching speed
  • Low gate charge (8nC typical)

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MSL Type

MSL Temp (°C)

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Channel Polarity

Configuration

V(BR)DSS Min (V)

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

RDS(on) Max @ VGS = 10 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Pricing ($/Unit)

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FDC2612

Active

Pb

A

H

P

TSOT-23-6

1

260

REEL

3000

Y

N-Channel

Single

200

±20

4.5

1.1

1.6

-

-

725

-

8

234

$0.2577

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