FDB3502: N-Channel Power Trench® MOSFET 75V, 14A, 47mΩ

Datasheet: FDB3502-D.pdf
Rev. A (394kB)
Product Overview
View Reliability Data
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Product Change Notification
This N-Channel MOSFET is produced using an advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
Features
 
  • Max rDS(on) = 47mΩ at VGS = 10V, ID = 6A
  • 100% UIL Tested
  • RoHS Compliant
Applications
  • Synchronous Rectifier
Availability & Samples
Specifications
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
FDB3502 Active
Pb-free
Halide free
FDB3502 D2PAK-3 / TO-263-2 418AJ 1 245 Tape and Reel 800 $0.6455
Market Leadtime (weeks) : Contact Factory

Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
V(BR)DSS Min (V)
VGS Max (V)
VGS(th) Max (V)
ID Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
RDS(on) Max @ VGS = 10 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Package Type
FDB3502  
 $0.6455 
Pb
H
 Active   
N-Channel
Single
75
±20
4.5
14
41
-
-
47
-
11
615
D2PAK-3 / TO-263-2
Case Outlines
418AJ   
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