FCP190N60E: Power MOSFET, N-Channel, SUPERFET® II, Easy Drive, 600 V, 20.6 A, 190 mΩ, TO-220

Datasheet: FCPF190N60E-D.pdf
Rev. A (807kB)
Product Overview
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Product Change Notification
SuperFET® II MOSFET is a brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
Features
 
  • 650V @TJ = 150°C
  • Max. RDS(on) = 190mΩ
  • Ultra low gate charge ( Typ. Qg = 63nC )
  • Low effective output capacitance ( Typ. Coss.eff = 178pF )
  • 100% avalanche tested
Applications
  • This product is general usage and suitable for many different applications.
Availability & Samples
Specifications
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
FCP190N60E Active
Pb-free
Halide free
FCP190N60E TO-220-3 340AT NA Tube 800 $1.7429
Market Leadtime (weeks) : Contact Factory

Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
V(BR)DSS Min (V)
VGS Max (V)
VGS(th) Max (V)
ID Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
RDS(on) Max @ VGS = 10 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Package Type
FCP190N60E  
 $1.7429 
Pb
H
 Active   
N-Channel
Single
600
DC: ±20, AC: ±30
3.5
20.6
208
-
-
190
-
63
2385
TO-220-3
Case Outlines
340AT   
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