N-Channel Power MOSFET 50V, 30A, 40mΩ

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Overview

This is an N-Channel enhancement mode silicon gate power MOSFET designed for applications such asswitching regulators, switching converters, motor drivers,relay drivers and drivers for high power bipolar switchingtransistors requiring high speed and low gate drive power.This type can be operated directly from integrated circuits.Formerly developmental type TA9771.

  • TBA
  • 30A, 50V
  • RDS(ON)= 0.040Ω
  • SOA is Power Dissipation Limited
  • Nanosecond Switching Speeds
  • Linear Transfer Characteristics
  • High Input Impedance
  • Majority Carrier Device
  • Related Literature- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”

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CAD Models

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Configuration

V(BR)DSS Min (V)

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

RDS(on) Max @ VGS = 10 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Pricing ($/Unit)

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BUZ11-NR4941

Active

Pb

A

H

P

TO-220-3

NA

0

TUBE

800

Y

N-Channel

Single

50

±20

2

30

75

-

-

40

-

7

1500

$0.4364

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