MOSFETs | BS270

N-Channel Enhancement Mode Field Effect Transistor 60V, 400mA, 2Ω

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Overview

This N-Channel enhancement mode MOSFET is produced using a proprietary, high cell density, DMOS technology. This product has been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. It can be used in most applications requiring up to 500 mA DC. This product is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.

  • This product is general usage and suitable for many different applications.
  • Power MOSFET Gate Drivers
  • Servo Motor Control
  • 400 mA, 60 V. RDS(ON) = 2 Ω @ VGS = 10 V.
  • High density cell design for extremely low RDS(ON).
  • Voltage controlled small signal switch.
  • Rugged and reliable.
  • High saturation current capability.

Material Composition

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CAD Models

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Configuration

V(BR)DSS Min (V)

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

RDS(on) Max @ VGS = 10 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Pricing ($/Unit)

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BS270-D74Z

Active

Pb

A

H

P

TO-92-3 LF

135AR

NA

0

FNFLD

2000

Y

N-Channel

Single

60

±20

2.5

400

0.625

-

-

2000

-

0.6

20

$0.0921

More Details

BS270

Active

Pb

A

H

P

TO-92-3

135AN

NA

0

BLKBG

10000

Y

N-Channel

Single

60

±20

2.5

400

0.625

-

-

2000

-

0.6

20

$0.1041

More Details

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