2N7002VA: N-Channel Enhancement Mode Field Effect Transistor 60V, 0.28A, 2Ω

Datasheet: 2N7002VA-D.pdf
Rev. A (440kB)
Product Overview
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Product Change Notification
N-Channel Enhancement Mode Field Effect Transistor 60V, 0.28A, 2Ω
Features
 
  • Dual N-Channel MOSFET
  • Low On-Resistance
  • Low Gate Threshold Voltage
  • Low Input Capacitance
  • Fast Switching Speed
  • Low Input/Output Leakage
  • Ultra-Small Surface Mount Package
  • RoHS Compliant
Applications
  • This product is general usage and suitable for many different applications.
Availability & Samples
Specifications
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
2N7002VA Active
Pb-free
Halide free
2N7002VA SOT-563 419BH 1 260 Tape and Reel 3000 $0.2783
Market Leadtime (weeks) : Contact Factory

Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
V(BR)DSS Min (V)
VGS Max (V)
VGS(th) Max (V)
ID Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
RDS(on) Max @ VGS = 10 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Package Type
2N7002VA  
 $0.2783 
Pb
H
 Active   
N-Channel
Dual
60
±20
2.5
0.28
0.25
-
Q1=Q2=7500
Q1=Q2=2000
-
-
37.8
SOT-563
Case Outlines
419BH   
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