IGBTs | PCFG25T120SQF

Ultra Field Stop IGBT 1200V 25A bare die

Obsolete

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Overview

This Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Ultra Field Stop Trench construction, and provides superiorperformance in demanding switching applications, offering both low onstate voltage and minimal switching loss.

  • Solar Inverter

  • Industrial

  • Extremely Efficient Trench with Ultra Field Stop Technology
  • TJmax = 175°C
  • Soft Fast Reverse Recovery Diode
  • Optimized for High Speed Switching
  • These are Pb−Free Devices

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V(BR)CES Typ (V)

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VF Typ (V)

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Co-Packaged Diode

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PCFG25T120SQF

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Obsolete

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CAD Model

Pb

A

H

P

-

-

NA

0

PLRNG

1

N

-

1200

100

1.7

-

-

-

-

-

136

-

-

-

-

Price N/A

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Reliability Data

Die Related Summary Data

Device: PCFG25T120SQF

Equivalent to wafer fab process: HVFET

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

HVFET

21

40576236131

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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