Ultra Field Stop IGBT 1200V 25A bare die

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Overview

This Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Ultra Field Stop Trench construction, and provides superiorperformance in demanding switching applications, offering both low onstate voltage and minimal switching loss.

  • Solar Inverter
  • Industrial
  • Extremely Efficient Trench with Ultra Field Stop Technology
  • TJmax = 175°C
  • Soft Fast Reverse Recovery Diode
  • Optimized for High Speed Switching
  • These are Pb−Free Devices

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CAD Models

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ON Target

Family

V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

Short Circuit Withstand (µs)

EAS Typ (mJ)

PD Max (W)

Co-Packaged Diode

Reference Price

PCFG25T120SQF

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CAD Model

Pb

A

H

P

-

-

NA

0

PLRNG

1

N

-

1200

100

1.7

-

-

-

-

-

136

-

-

-

-

Price N/A

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