onsemi’s EliteSiC Silicon Carbide Family Solutions Deliver Industry-Leading Efficiency

2023年1月4日

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新的1700 V EliteSiC器件在能源基础设施和工业驱动应用中实现可靠、高能效的工作

2023年1月4日 —领先于智能电源和智能感知技术的安森美(onsemi,美国纳斯达克股票代号:ON),宣布将其碳化硅(SiC)系列命名为“EliteSiC”。在本周美国拉斯维加斯消费电子展览会(CES) 上,安森美将展示EliteSiC 系列的3款新成员:一款1700 V EliteSiC MOSFET和两款1700 V雪崩EliteSiC肖特基二极管。这些新的器件为能源基础设施和工业驱动应用提供可靠、高能效的性能,并突显安森美在工业碳化硅方案领域的领导者地位。

安森美的1700 V EliteSiC MOSFET(NTH4L028N170M1),提供高功率工业应用所需的更高击穿电压(BV)的SiC方案。两款1700 V雪崩EliteSiC肖特基二极管(NDSH25170ANDSH10170A)让设计人员能够实现在高温高压下稳定运行、同时由SiC赋能高能效的设计。

安森美执行副总裁兼电源方案部总经理Simon Keeton说:“新的1700 V EliteSiC器件提供出色的能效和更低的功率损耗,加强了我们EliteSiC系列产品在性能和品质方面的高标准,同时也进一步扩大了安森美EliteSiC的深度和广度。加上我们的端到端SiC制造能力,安森美提供的技术和供货保证可以满足工业能源基础设施和工业驱动提供商的需求。”

可再生能源应用正不断向更高的电压发展,其中太阳能系统正从1100 V向1500 V直流母线发展。为了支持这变革,客户需要具有更高击穿电压(BV)值的MOSFET。新的1700 V EliteSiC MOSFET的最大Vgs范围为-15 V/25 V,适用于栅极电压提高到-10 V的快速开关应用,提供更高的系统可靠性。

在1200 V、40 A的测试条件下,1700 V EliteSiC MOSFET的栅极电荷(Qg)达到领先市场的200 nC,而同类竞争器件的Qg近300 nC。低Qg对于在快速开关、高功率可再生能源应用中实现高能效至关重要。

在1700 V的额定击穿电压(BV)下,EliteSiC肖特基二极管器件在最大反向电压(VRRM)和二极管的峰值重复反向电压之间提供了更好的余量。新器件还具有出色的反向漏电流性能,其最大反向电流(IR)在25°C时仅为40 µA,在175°C时为100 µA --明显优于在25°C时额定值通常为100 µA的竞争器件。

欲了解关于安森美的EliteSiC方案的更多信息,请访问onsemi.cn或于美国时间1月5日至8日在美国内华达州拉斯维加斯举行的消费电子展览会(CES)莅临安森美展台。

About onsemi

onsemi (Nasdaq: ON) is driving disruptive innovations to help build a better future. With a focus on automotive and industrial end-markets, the company is accelerating change in megatrends such as vehicle electrification and safety, sustainable energy grids, industrial automation, and 5G and cloud infrastructure. onsemi offers a highly differentiated and innovative product portfolio, delivering intelligent power and sensing technologies that solve the world’s most complex challenges and leads the way to creating a safer, cleaner, and smarter world. onsemi is recognized as a Fortune 500® company and included in the S&P 500® index. Learn more about onsemi at www.onsemi.com.

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onsemi and the onsemi logo are trademarks of Semiconductor Components Industries, LLC. All other brand and product names appearing in this document are registered trademarks or trademarks of their respective holders. Although the Company references its website in this news release, information on the website is not to be incorporated herein.

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