Product Description
The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. The Schottky Rectifier's state-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. It is ideally suited for use as rectifiers in low-voltage, high-frequency inverters, free wheeling diodes and polarity protection diodes.
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Features |
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Guardring for Stress Protection
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125 C Operating Junction Temperature
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Epoxy Meets UL94, VO at 1/8 inch
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Package Designed for Optimal Automated Assembly
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ESD Ratings: Machine Model = C, Human Body Model = 3B
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AEC-Q101 Qualified and PPAP Capable
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NRVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements
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