Silicon Carbide (SiC)

Silicon carbide (SiC) is a semiconductor material used to efficiently control and convert electrical power at much higher voltages, temperatures, and power levels than traditional silicon. It enables systems that are smaller, lighter, and more energy‑efficient.

Engineering insight: SiC is a wide‑bandgap semiconductor with a much higher critical electric field than silicon, allowing devices to operate at higher voltage with lower losses and higher switching speed.

With a much higher electrical field, silicon carbide can handle higher power with less wasted energy. This allows power electronics systems to run cooler, use fewer components, and deliver more performance in a smaller footprint.

Engineering insight: For the same voltage rating, SiC devices can be significantly thinner than silicon devices, reducing on‑resistance, switching losses, and cooling requirements at the system level.

“Wide bandgap” refers to the large energy gap between the valence and conduction bands in materials like SiC. This is what allows silicon carbide to operate safely at higher voltage and temperature without breaking down, and outperform silicon in demanding power applications.

Engineering insight: The wider bandgap and higher breakdown field enable higher junction temperatures, faster switching, and higher voltage operation compared to silicon.

Any time heat is released from a system, it is energy wasted. Silicon carbide wastes less energy as heat – more of the electrical power goes to doing useful work instead of being lost, which improves overall system efficiency and reduces cooling needs.

Engineering insight: Lower switching losses, minimal reverse‑recovery behavior, and reduced conduction losses contribute to higher efficiency across AC‑DC, DC‑DC, and inverter topologies.

onsemi EliteSiCstands out due to:

• Full vertical integration:substrate → epitaxy → device → package → modules
• Automotive‑grade, high‑reliability processesoptimized for mission‑critical systems
• Industry‑leading Rds(on) and switching performance across MOSFET and diode portfolio
• Proven field reliabilityin EV powertrains, fast chargers, and energy systems
• Advanced packaging,including top-side cooling, low-inductance layouts, and high-power module options
• Wide portfolio breadthcovering MOSFETs, diodes, JFETs, Cascode JFETs, modules, and integrated power solutions

This combination allows customers to achieve consistent performance, predictable supply, and faster product development cycles.

By controlling every manufacturing stage — including SiC boule growth, wafering, epitaxy, device fabrication, test, and packaging — onsemi ensures:

• tightly managed material quality
• optimized electrical performance
• predictable long‑term supply
• higher reliability for automotive‑grade products
• rapid iteration and development of new device generations

Vertical integration is a major differentiator from competitors that rely on external substrate suppliers.

onsemi provides one of the industry’s broadest SiC portfolios, including:

• SiC MOSFETs (650V, 750V, 1200V, 1700V)
• SiC Schottky diodes
• SiC JFETs, Combo JFETs and Cascode JFETs (CJFETs)
• EliteSiC power modules for traction inverters, onboard chargers, energy storage, and industrial drives
• Integrated solutions such as gate drivers optimized for SiC devices

In electric vehicle traction inverters and onboard chargers, EliteSiC enables:

• higher inverter efficiency and lower switching loss
• reduced heat generation and smaller cooling systems
• increased driving range
• faster DC fast charging
• smaller inverter and charger form factors

Automotive OEMs adopt EliteSiC to achieve system‑level gains that directly impact battery cost, range, and driving dynamics.

AI data centers require extremely high power density and efficiency due to massive compute loads. EliteSiC enables power systems that:

• reduce conversion losses across AC‑DC and DC‑DC stages
• support high‑frequency switching for smaller magnetics
• maintain efficiency at the high power levels required by GPU clusters and liquid‑cooled racks
• reduce energy consumption and operational cost

SiC is critical for next‑gen AI server PSUs, accelerators, and high‑power UPS systems.

How does EliteSiC benefit industrial automation systems?

Industrial robotics, motor drives, and automation equipment use SiC to achieve:

• higher switching frequency for smoother motor control
• reduced power loss in servo drives
• higher torque response and better motion precision
• more compact power stages

SiC also supports higher reliability in harsh factory environments.

EliteSiC enhances solar, wind, and energy storage systems by enabling:

• higher inverter efficiency
• lower thermal losses and simpler cooling
• smaller, lighter systems suitable for both utility‑scale and distributed energy
• improved power density for battery energy storage systems (BESS)
• higher reliability over long operating lifetimes

SiC plays a central role in modernizing power grids and renewable installations.

Yes — EliteSiC devices meet strict reliability standards including AEC‑Q101/Q102 automotive qualification requirements and AQG324 for automotive power modules. Dynamic testing, such as dynamic reverse bias (DRB) and dynamic gate stress (DGS), avalanche robustness, and long-term reliability evaluations are typical qualification elements for SiC devices.

onsemi provides:

• Discrete packages: TO‑247, D2PAK, top-cool packages (TCPAK), Kelvin‑source pins
• Power modules: automotive traction, onboard charger, BESS, UPS, industrial drive modules
• Low‑inductance designs optimized for high‑speed SiC switching

Advanced thermal management ensures lower junction‑to‑case resistance and superior heat dissipation.

Resources include:

• PLECS and SPICE models
• reference designs for EV, energy, industrial, and data center systems
• application notes, thermal data, and best‑practice layouts
• evaluation boards and development kits
• co‑design support with gate drivers and module evaluation systems